UK Nitrides Consortium
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UKNC 2006 Conference Programme
University of Sheffield
4th July 2006
10.00-10.45Arrival/Coffee
10.45-10.50Welcome to Warwick: Chris McConville
Introduction: Tom Foxon
10.50-11.05 Electronic properties of InN and InGaN surfaces and their influence on doping
P.D.C. King1, T.D. Veal1, P.H. Jeferson1, C.F. McConville, H. Lu2 and W.J. Schaff2
1.Department of Physics, University of Warwick
2.Department of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, USA
11.05-11.20Origin of the n-type conductivity of InN – the role of positively charged dislocations
T.D. Veal1, L.F.J. Piper1, C.F. McConville1, H. Lu2 and W.J. Schaff2
1.Department of Physics, University of Warwick
2.Department of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, USA
11.20-11.50 Dopants and defects in group III-nitrides (Invited)
W. Walukiewicz1, R.E. Jones1,2, N. Miller1,2, K.M. Yu1, J. W. Ager1 and Z. Liliental-Weber1
1.Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
2.Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
12.15-12.30 Calibration and Application of Scanning Capacitance Microscopy
J. Sumner, R.A. Oliver, M.J. Kappers and C.J. Humphreys
Department of Materials Science & Metallurgy, University of Cambridge
12.30-12.45 Luminescence of Eu-implanted AlGaN from GaN to AlN
K. Wang1, K. Lorenz2, B. Hourahine1, P.R. Edwards1, I.M. Watson3, E. Alves2, K.P. O’Donnell1 and R.W. Martin1
1.Department of Physics, SUPA, Strathclyde University, Glasgow
2.ITN, Estrada Nacional 10, 2686-953 Sacavém, Portugal
3.Institute of Photonics, SUPA, Strathclyde University, Glasgow
12.45-1.00Observation of phonon related features in the excitation spectroscopy of InGaN/GaN quantum well structures
N. Hylton1, P. Dawson1, M.J. Kappers2 and C.J. Humphreys2
1.Department of Physics, University of Manchester 2.Department of Materials Science & Metallurgy, University of Cambridge
13.00-14.15Lunch/Posters
14.15-14.30 Growth and Fabrication of 315 nm UVLEDs
F. Ranalli, J. Bai, K.B. Lee, Q. Wang, T. Wang, R.J. Airey, G. Hill and P.J. Parbrook
National Centre for III-V Technologies, Department of Electronic and Electrical Engineering, University of Sheffield
14.30-14.45 Individually-addressable flip-chip micro-LED arrays with integrated micro-lenses
D. Massoubre, H.X. Zhang, B. Guilhabert, Z. Gong, C. Griffin, J. McKendry, E. Gu and M.D. Dawson
Institute of Photonics, University of Strathclyde, Glasgow
14.45-15.00 Noise study in photodiodes based on InGaN/GaN MQW
A.Navarro, C. Rivera, R. Cuerdo, J.L. Pau, J. Pereiro, F. Calle and E. Muñoz
1.University of Strathclyde, SUPA, Dept. of Physics, Glasgow
2.ITN, Estrada Nacional 10, 2686-953 Sacavém, Portugal
3.University of Strathclyde, SUPA, Inst of Photonics, Glasgow
15.00-15.30Tea break
15.30-15.45 Fabrication of direct contacts to the 2DEG in AlGaN/GaN heterostructures
F. Rahman1, S. Xu1, I.M. Watson2 and E. Wasige1
1.Department of Electronics and Electrical Engineering, University of Glasgow
2.Institute of PhotonicsUniversity of Strathclyde, Glasgow
15.45-16.00GaN HFETs on Si substrates
D.J. Wallis, D.E.J. Soley, P.J. Wright, L. Koker, J.O. Maclean, D.G. Hayes, M.J. Uren, K.P. Hilton, A.G. Munday and T. Martin
QinetiQ Ltd., Malvern
16.00-16.15 Free-standing zinc-blende (cubic) GaN layers and substrates
Z. Gong , H. X. Zhang, E. Gu and M. D. DawsonS.V. Novikov, N.M. Stanton, R.P. Campion, C.T. Foxon and A.J. Kent
School of Physics and Astronomy, University of Nottingham

Posters
1. TEM investigations of non-polar and semi-polar GaN
C.F. Johnston, M.J. Kappers, J.S. Barnard and C.J. Humphreys
Department of Materials Science and Metallurgy, University of Cambridge

2. A comparative study of the recombination dynamics of polar, semi polar and non polar GaN/AlGaN quantum well structures
T. Badcock1, P. Dawson1 , J. Hollander2, M.J. Kappers2 and C.J. Humphreys2
1.Department of Physics, University of Manchester
2.Dept. of Materials Science & Metallurgy, University of Cambridge

3. Towards quantitative measurement of dislocation densities in GaN-based films using X-ray diffraction
M.A. Moram, M.E.Vickers, M.J.Kappers, and C.J. Humphreys
Department of Materials Science and Metallurgy, University of Cambridge

4. Fabrication and characterization of double dielectric mirror GaN microcavities
K. Bejtka1, 3, P.R. Edwards1, R.W. Martin1, F. Reveret2, A.Vasson2,J. Leymarie2, I.R. Sellers3, M. Leroux3, F. Semond3
1. Department of Physics, SUPA, University of Strathclyde, Glasgow
2.LASMEA, Université Blaise Pascal –Clermont-Ferrand, France
3.CRHEA-CNRS, Rue Bernard Grégory, Parc Sophia Antipolis, Valbonne 06560, France

5. Micro-pixellated flip-chip light emitting diodes integrated with CMOS drivers and detectors
J. McKendry1, C. Griffin1, H.X. Zhang1, Z. Gong1, B. Guilhabert1, D. Massoubre1, E. Gu1, M.D. Dawson1, B.R. Rae2, D. Renshaw2, and R. Henderson2
1.Institute of Photonics, University of Strathclyde, Glasgow
2.School of Engineering and Electronics, University of Edinburgh