| UK NITRIDES CONSORTIUM |
 |
 |
|
| home | |
| about UKNC | |
| meetings | |
| members | |
| bursaries | |
| committee | |
| join us | |
| contact us | |
| useful links | |
| ©2003 UKNC info@uknc.org |
|
UKNC 2006 Conference Programme
|
|
| Programme in pdf format | |
Wednesday 11th January 2006 |
|
| 10.15-10.40 | Arrival/Coffee |
| 10.40-10.50 | Introductory Remarks Tom Foxon, Rob Martin, Ted Thrush |
| 10.50-11.05 | The use of in-situ SiNx interlayers for dislocation reduction in GaN M.J. Kappers, R.A. Oliver, R.Datta, M.B. Charles, M.J. Sumner, F.D.G. Rayment and C.J. Humphreys Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB2 3QZ, UK |
| 11.05-11.20 | Growth of (11-20) and (11-22) GaN on r- and m-plane sapphire J.L. Hollander, M.J. Kappers, C. Johnston, C. McAleese, C.J. Humphreys Department of Materials Science and Metallurgy, University of Cambridge, CB2 3QZ,UK |
| 11.20-11.35 | Optical Properties of AlInN epilayers R.W. Martin1, K. Wang1, S. Hernandez1, D. Amabile1, D. Wolverson2, I.M. Watson3 1Department of Physics, University of Strathclyde, 107 Rottenrow, Glasgow G4 0NG, UK 2Department of Physics, University of Bath, Bath BA2 7AY, UK 3Institute of Photonics, University of Strathclyde, 106 Rottenrow, Glasgow G4 0NW, UK |
| 11.35-11.50 | Characterisation of nitride thin films by electron backscattered diffraction correlated with cathodoluminescence hyper-spectral mapping F. Sweeney1, C. Trager-Cowan1, P.R. Edwards1, A. J. Wilkinson2, B. Hourahine1,A. Winkelmann3, R.W. Martin1, K. P. O’Donnell1, I.M. Watson4, S. Einfeldt5, D. Hommel5, S. D. Hersee6, D. Zubia6 1Department of Physics, University of Strathclyde, Glasgow G4 ONG, Scotland, UK 2Department of Materials, University of Oxford, Oxford OX1 3PH, UK 3MaxPlanck Institute for Microstructural Physics, Weinberg 2, D-06120, Halle, Germany 4Institute of Photonics, University of Strathclyde, Glasgow G4 ONW, Scotland, UK 5Institute of Solid State Physics, University of Bremen, 28359 Bremen, Germany 6Center for High Technology Materials, University of New Mexico, Albuquerque, USA |
| 11.50-12.05 | Microstructural characterisation of zinc-blende GaMnN grown by MBE as a function of III:V ratio, Mn flux and temperature Y. Han1, M.W. Fay1 and P.D. Brown1, S.V. Novikov2, K.W. Edmonds2, B.L. Gallagher2, R.P. Campion2 and C.T. Foxon2 1School of Mechanical, Materials and Manufacturing Engineering, University of Nottingham, University Park, Nottingham NG7 2RD, UK 2School of Physics and Astronomy, University of Nottingham, University Park, Nottingham NG7 2RD, UK |
| 12.05-12.20 | Sub-micron optical resolution using two-photon excitation in the study of single InGaN/GaN quantum dots A. Jarjour1, R. A. Taylor1, R.W. Martin2, I.M. Watson3, R.A. Oliver4, G.A.D. Briggs4, M.J. Kappers5 and C.J. Humphreys5 1Clarendon Laboratory, University of Oxford, Parks Road, Oxford, OX1 3PU, UK 2Department of Physics, University of Strathclyde, 107 Rottenrow, Glasgow G4 0NG, UK 3Institue of Photonics, University of Strathclyde, 106 Rottenrow, Glasgow G4 0NW, UK 4Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, UK 5Department of Materials, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, UK. |
| 12.20-12.35 | Nuclear magnetic relaxation measurements of hexagonal and cubic GaN Robin Morris, Nicola Stanton, Tony Kent, Helen Geen, Tom Foxon and Sergei Novikov School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK |
| 12.35-13.50 | Lunch |
| 13.50-14.40 | Recent advances in AlGaN-GaN-based deep UV LEDs and high-power microwave devices (Invited) M. Asif Khan Department of Electrical Engineering, University of South Carolina, Columbia SC 29208, USA |
| 14.40-14.55 | Optimisation of AlGaN barrier layer in GaN HFETs D.J. Wallis, R.S. Balmer, A.M. Keir, L. Koker, M.J. Uren, T. Martin QinetiQ Ltd., Malvern, Worcestershire, WR14 3PS, UK |
| 14.55-15.10 | Short-channel effects in GaN HFETs M.J. Uren1, K.J. Nash1, J.L. Glasper1, R.S. Balmer1, J. Powell1, T. Martin1, S.L. Delage2, J.C. De Jaeger3, Peter McGovern4 and Paul J. Tasker4 1QinetiQ Ltd. Malvern, Worcestershire, WR14 3PS, UK 2TIGER/TRT Domaine de Corbeville 91404 Orsay Cedex, France 3TIGER/IEMN Lille University UMR 8520, Avenue Poincaré 59652 Villeneuve d'Ascq, Cedex, France 4Dept of Electrical and Electronic Engineering, Cardiff School of Engineering, Cardiff University, The Parade, Cardiff, CF24 3TF, Wales, UK |
| 15.10-15.25 | Surface pre-treatment prior to passivation for AlGaN/GaN HEMTs R.T. Green1, W.S. Tan1 and P.A. Houston1; M. Uren2, R. Balmer2 and T. Martin2 1Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield, S1 3JD, UK 2QinetiQ Ltd, St Andrews Road, Great Malvern, Worcestershire, UK |
| 15.25-15.50 | Tea |
| 15.50-16.05 | High-efficiency near-UV-emitting InGaN/AlInGaN MQWs D. Zhu1, M.J. Kappers1, C. McAleese1, P.M.F.J. Costa1, F.D.G. Rayment1, C.J. Humphreys1, D.M. Graham2, G.R. Chabrol2, P. Dawson2, E.J. Thrush3 J.T. Mullins3 1Department of Materials Science and Metallurgy, University of Cambridge, CB2 3QZ, UK 2School of Physics and Astronomy, The University of Manchester M60 1QD, UK 3Thomas Swan Scientific Equipment Limited, Buckingway Business Park, Cambridge,CB4 5FQ,UK |
| 16.05- 16.20 | Photoluminescence and phonon satellites in InGaN quantum wells with varying cap thicknesses Lay Theng Tan1, I.M.Watson2, R.W. Martin1 1Department of Physics, University of Strathclyde, 107 Rottenrow, Glasgow G4 0NG, UK 2Institute of Photonics, University of Strathclyde, 106 Rottenrow, Glasgow G4 0NW, UK |
| 16.20-16.35 | Theory of optical transitions between the excited states in InGaN MQWs: an attempt to describe recent experiments A.D. Andreev1, D.O. Kundys2, M.S. Skolnick 2, J. P.R. Wells2, T. Wang3, P.J. Parbrook3 1Advanced Technology Institute, University of Surrey, Guildford, GU2 7XH 2Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH 3EPSRC National Centre for III-V Technologies, University of Sheffield, Sheffield S1 3JD |
| 16.35-16.50 | Non-radiative energy transfer in hybrid structures combining InGaN single QWs and light-emitting polymers I.M.Watson1, G.Heliotis2, G.Itskos2, R.Murray2, D.D.C. Bradley2, and M.D. Dawson1 1Institute of Photonics, University of Strathclyde, 106 Rottenrow, Glasgow G4 0NW, UK 2Blackett Laboratory, Imperial College London, Prince Consort Road, London SW7 2BZ, UK |
| 16.50-17.05 | Pico-second ultrasonic studies of GaN-based heterostructures. Paul Walker, Nicola Stanton, Tony Kent, Tom Foxon and Sergei Novikov School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD |
Thursday 12th January 2006 |
|
| 9.10-9.25 | Application of band-edge thermometry techniques to wide-bandgap materials Jeff Harris Richard Thomson Associates, Highfield, Back Lane, Monks Eleigh, Suffolk IP7 7BA, UK |
| 9.25-9.40 | Ohmic contacts to p-type GaNbr>
Brian Corbett1, Pleun Maaskant1, Liam Lewis1, Susie Heck1, Mahbub Akhter1 and David Schenk2 1Photonic Sources Team, Tyndall National Institute, Lee Maltings, Prospect Row, Cork, Ireland 2CRHEA, CNRS, Rue Bernard Gregory, Sophia Antipolis, F-06560 Valbonne, France |
| 9.40-9.55 | Characterisation of ohmic contacts to AlGaN/GaN and GaMnN M.W. Fay1, Y. Han1 and P.D. Brown1, S.V. Novikov2, K.W. Edmonds2, K.Wang2, R. P. Campion2, B.L. Gallagher2 and C.T. Foxon2, K.P. Hilton3, A. Masterton3, D. Wallis3, R.S. Balmer3, M.J. Uren3, T. Martin3 1School of Mechanical, Materials & Manufacturing Engineering, University of Nottingham, Nottingham NG7 2RD, UK 2School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK 3QinetiQ Ltd. Malvern, Worcestershire, WR14 3PS, UK |
| 9.55-10.10 | Scanning capacitance microscopy on gallium nitride M.J. Sumner, R.A. Oliver, C.J. Humphreys Department of Materials Science and Metallurgy, University of Cambridge CB2 3QZ,UK |
| 10.10-10.25 | High -resolution electrochemical capacitance-voltage profiling of GaN and related materials S. Wang1, T. Ryan1, G. Webster1, A. Majima1, C.Meaton2 1Accent Optical Technologies 2MCL Ltd. |
| 10.25-10.40 | Properties of AlGaN on AlN for UVLEDs F. Ranalli, T. Wang, J. Bai, K.B. Lee and P.J. Parbrook National Centre for III-V Technologies University of Sheffield, Mappin Street, Sheffield, S1 3JD, UK |
| 10.40-11.10 | Coffee break |
| 11.10-11.25 | III-nitride photonic crystal and waveguide structures Harold M.H. Chong and Richard M. De La Rue Optoelectronics Research Group, Department of Electronics and Electrical Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, Glasgow G12 8LT, Scotland, UK |
| 11.25-11.40 | Current density-dependent characteristics of a new design of phosphor-free white LED D. Lancefield1, S. Ahmed1 and T.E. Sale1, P. de Mierry2 and F. Tinjod2 1Advanced Technology Institute, University of Surrey, Guildford, Surrey, GU2 7XH, UK 2Centre de Recherche sur l’Hétéro-Epitaxie et ses Applications, CNRS-CRHEA,Rue Bernard Grégory, 06560 Valbonne, France |
| 11.40-11.55 | Processing of N-face GaN for microcavity applications F. Rizzi1,2, K.Bejtka1,2, E.Gu1, M.D. Dawson1, I.M. Watson1, R.W. Martin2 1Institute of Photonics, University of Strathclyde, 106 Rottenrow, Glasgow G4 0NW, UK 2Department of Physics, University of Strathclyde, 107 Rottenrow, Glasgow G4 0NG, UK |
| 11.55-12.10 | Fabrication and performance of individually addressed micro-stripe LED devices E. Gu, H.X. Zhang, C.W. Jeon, Z. Gong, and M.D. Dawson Institute of Photonics, University of Strathclyde, Glasgow G4 0NW, UK |
| 12.10-12.25 | Colour conversion of UV micro-LEDs with light-emitting polymers C. Griffin1, E. Gu1, G. Heliotis2, C. W. Jeon1, P. Stavrinou2, D.D.C. Bradley2, and M.D. Dawson1 1Institute of Photonics, University of Strathclyde, 106 Rottenrow, Glasgow G4 0NW, UK 2Blackett Laboratory, Imperial College London, Prince Consort Road, London, SW7 2BZ, UK |
| 12.25-12.40 | Cross-sectional EBIC investigation of diffusion and recombination of minority carriers in InGaN/GaN MQW LEDs Grigore Moldovan1, Vincent KS Ong1, Payam Kazemian1, Oka Kurniawan2, Ted Thrush3, Colin J Humphreys1 1Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, UK 2School of Electrical and Electronic Engineering, Nanyang Technological University, Block S2, Nanyang Avenue, Singapore, 639798, Singapore 3Thomas Swan Scientific Equipment Limited, Buckingway Business Park, Cambridge, CB4 5UG, UK |
| 12.40- 14.00 | Lunch |
Posters |
|
|
1. Growth of bulk gallium nitride by hydride vapour phase epitaxy A. Gott, S. Stepanov, W. N. Wang, C. Liu , P. Shields Department of Physics, University of Bath, Bath, BA2 7AY, UK 6
2. The incorporation mechanism of Fe in GaN grown by MOVPE
3. Selective-area growth of periodic GaN/InGaN micro- and nanostructures
4. GaN-based lasers with focused ion beam-etched DBR gratings for vertical emission
5. Characterisation of the optical properties of Tm-doped and ion-implanted GaN
6. Comparison of Eu and Er-related cathodoluminesence from AlInN and GaN hosts
7. High-temperature refractive indices of GaNC
8. Microstructure and strain-free lattice parameters of ScxGa1-xN films
9. Improved transport efficiencies by design |
|
AcknowledgementsWe are very grateful to the Institute of Physics and to the Institute of Physics Publishing for their sponsorship of this meeting.. |
|